Single-reflection attenuated total reflection of organic monolayers on silicon.

Grazing angle attenuated total reflection spectroscopy: fields at the interface and source of the enhancement.

With the tremendous growth in the semiconductor and coatings industries, spectroscopic methods of examining extremely thin films on high refractive index substrates have become increasingly important. One infrared method for analyzing monolayers on substrates such as silicon and gold that has recently gained popularity is 'grazing' or high angle of incidence attenuated total reflection (ATR) sp...

Covalently-bound organic monolayers for biosensor applications

In this paper, we present a detailed investigation on monolayer formation with thicknesses amounting 1 nm to 3 nm on silicon and silicon nitride surfaces. Thermal and photochemical methods are successfully used to form such stable and densely backed monolayers. Further, functionalisation of these surfaces with activated esters, amine groups are also presented. Static water contact angle measure...

X-ray specular reflection studies of silicon coated by organic monolayers (alkylsiloxanes).

Efficiency Enhancement of Si Solar Cells by Using Nanostructured Single and Double Layer Anti-Reflective Coatings

The effect of single and double-layer anti-reflective coatings on efficiency enhancement of silicon solar cells was investigated. The reflectance of different anti-reflection structures were calculated using the transfer matrix method and then to predict the performance of solar cells coated by these structures, the weighted average reflectance curves were used as an input of a PC1D simulation....

Design of Silicon Nano-Bars Anti-Reflection Coating to Enhance Thin Film Solar Cells Efficiency

In this paper a novel anti-reflection (AR) coating based on silicon nano-bars is designed and its impact on the performance of crystalline silicon (c-Si) thin-film solar cells is extensively studied. Silicon nano-bars with optimized size and period are embedded on top of the active layer, under a 100nm Si3N4 layer. As a result of the proposed layer stack, an inhomogeneous intermediate layer wit...